![]() ![]() The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10 −18 cm 2 s −1 with an activation enthalpy E A < 0.2 eV for the mobility limiting species. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 10 6 s. The Si spacer step was strategically introduced from the viewpoint of a new structural design to secure the surface quality of the back-channel region of the nanoscale IGZO VTFTs. When the cap layer is deposited at room temperature (RT), the mobility in the 310 ☌ deposited CAAC layer is initially low (6.7 cm 2/V s), but rises continuously with time over 58 days to 20.5 cm 2/V s, i.e., to the same value as when the second layer is deposited at 260 ☌. Vertical channel thin film transistors (VTFTs) using silicon (Si) spacer steps and InGaZnO (IGZO) active channels were demonstrated. First Online: 02 October 2022 Part of the Advances in Sustainability Science and Technology book series (ASST) Abstract This paper proposed design and analysis of an Indium Gallium Zinc Oxide (IGZO)-based Junctionless Thin Film Transistors (JLTFT), using 20 nm Silicon On Insulator (SOI) technology. The deposition temperature of the second layer influences the mobility of the underlying transport layer. The TFT exhibits a saturation field-effect mobility of ∼20 cm 2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 ☌ deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 ☌ deposited amorphous IGZO layer. ![]()
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